Hydrogen sensors on the basis of SnO2-TiO2 systems

被引：37

作者：

Shaposhnik, D. ^{[1
]}

Pavelko, R. ^{[2
]}

Llobet, E. ^{[1
]}

Gispert-Guirado, F. ^{[1
]}

Vilanova, X. ^{[1
]}

机构：

[1] Univ Rovira & Virgili, Minos EMAS, Dept Elect Engn, Tarragona, Spain

[2] Univ Tubingen, Inst Phys Chem, Tubingen, Germany

来源：

EUROSENSORS XXV | 2011年 / 25卷

关键词：

semiconductor gas sensor; hydrogen; tin oxide; titanium oxide; crystallite growth model;

D O I：

10.1016/j.proeng.2011.12.279

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this study we compare sensor responses to H-2 in air using two types of sensing materials: SnO2 bulk doped with TiO2 and mechanical mixtures of SnO2 and TiO2. The materials were analyzed in the broad range of working temperatures and H-2 concentrations. Thermal stability of SnO2 bulk doped with TiO2 was studied by in-situ XRD at 700 degrees C. (C) 2011 Published by Elsevier Ltd.

引用

页数：4

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