Eutectic solder bump process for ULSI flip chip technology

被引:1
作者
Ezawa, H
Miyata, M
Inoue, H
机构
来源
TWENTY FIRST IEEE/CPMT INTERNATIONAL ELECTRONICS MANUFACTURING TECHNOLOGY SYMPOSIUM | 1997年
关键词
D O I
10.1109/IEMT.1997.626934
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel eutectic solder bump process, which allows ULSI chips area array pad layout, has been developed. Straight side wall bumps as plated using a new nega-type photo resist and eutectic solder electroplating provide several advantages over conventional mushroom bumps. The novel developed process gives the bump height uniformity as renewed of less than 10 % within wafer. Composition measurements using ICP spectrometry have been performed to investigate the bump height dependence on solder compositions and the metal content dependence of a plating solution on the solder composition uniformity within wafer. Experimental results show that the plating solution with the total metal concentration of more than 60 g/l gives the uniformity at eutectic point of less than 3 % within wafer. In addition, we have confirmed that use of eutectic solder disk anode keeps the composition of a plating solution constant for long term product run.
引用
收藏
页码:293 / 298
页数:6
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