Characterizing electron shower with CHARM®-2 wafers on Eaton NV-8200P medium current ion implanter

被引：0

作者：

Reno, S ^{[1
]}

Gonzalez, H ^{[1
]}

Messick, C ^{[1
]}

Lukaszek, W ^{[1
]}

St Angelo, DA ^{[1
]}

Becker, K ^{[1
]}

Rogers, B ^{[1
]}

Romanski, T ^{[1
]}

机构：

[1] Fairchild Semicond, W Jordan, UT 84088 USA

来源：

1998 IEEE INTERNATIONAL INTEGRATED RELIABIILTY WORKSHOP FINAL REPORT | 1998年

关键词：

D O I：

10.1109/IRWS.1998.745374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Avoiding gate oxide damage due to excessive wafer charging has always been an issue with high current implanters. On the other hand, whether it is caused by shrinking of device dimensions, or its use as a backup for high current applications, charging level awareness becomes the primary limiting factor for running higher beam currents in medium current implanters. Often times, a cautious approach results in lower machine throughput. To the present, flooding the wafer with low energy electrons from electron showers (E-Shower) has been the widely accepted means of reducing wafer charging. The effectiveness of the E-shower in reducing charging as a function of primary ion current has been investigated in Eaten's medium current ion implanter. Extensive testing included over 180 bare and photoresist coated CHARM(R)-2 charge monitors. Optimum shower settings will be presented and discussed in the light of CHARM-2 results and product split lot yields.

引用

页码：86 / 89

页数：4

共 5 条

[1] BEAM ENERGY PURITY IN THE EATON NV-8200P ION IMPLANTER
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 13 - 17
[2] Enhanced utilization of SDS cylinder gases on the Eaton NV 8200P ion implanter
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[3] USING A WEDGE OXIDE TO MONITOR LOW-ENERGY BEAM PURITY BY MEANS OF THERMA-WAVE MEASUREMENTS IN THE EATEN NV-8200P ION IMPLANTER
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[4] Characterization of a Xenon plasma electron flood gun on a GSD-200E2 high current implanter using QBD, FLASH, SPIDER, and CHARM™-2 wafers
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[5] ENERGY CONTAMINATION OF P2+ ION-BEAMS ON THE VARIAN, EXTRION-220 MEDIUM CURRENT IMPLANTER
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