High-Performance n-Type Polymer Semiconductors: Applications, Recent Development, and Challenges

被引:305
作者
Sun, Huiliang [1 ]
Guo, Xugang [1 ]
Facchetti, Antonio [2 ,3 ,4 ]
机构
[1] Southern Univ Sci & Technol, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China
[2] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
[3] Northwestern Univ, Mat Res Ctr, 2145 Sheridan Rd, Evanston, IL 60208 USA
[4] Flexterra Corp, 8025 Lamon Ave, Skokie, IL 60077 USA
关键词
HIGH-ELECTRON-MOBILITY; CONJUGATED POLYMERS; BAND-GAP; BUILDING-BLOCK; SOLAR-CELLS; ACCEPTOR; IMIDE; MORPHOLOGY; CHANNEL; AMBIENT;
D O I
10.1016/j.chempr.2020.05.012
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
High-performance n-type (electron-transporting or n-channel) polymer semiconductors are critical components for the realization of various organic optoelectronic devices and complementary circuits, and recent progress has greatly advanced the performance of organic thin-film transistors, all-polymer solar cells, and organic thermoelectrics, to cite just a few. This Perspective focuses on the recent development of high-performance n-type polymer structures, particularly those based on the most investigated and novel electron-deficient building blocks, as well as summarizes the performance achieved in the above devices. In addition, this Perspective offers our insights into developing new electron-accepting building blocks and polymer design strategies, as well as discusses the challenges and opportunities in advancing n-type device performance.
引用
收藏
页码:1310 / 1326
页数:17
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