Heavy-ion single-event effects testing of lead-on-chip assembled high-density memories

被引：10
|
作者：
Harboe-Sorensen, R [1 ]
Guerre, FX
Loquet, JG
Tizon, C
机构：
[1] European Space Agcy, Estec, NL-2200 AG Noordwijk, Netherlands
[2] Hirex Engn, F-31400 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期
关键词：
heavy ion irradiation; high-density memories; irradiation from the front or back side; lead-on-chip; plastic packaged; preparation techniques; SDRAM; single event effect testing; single event upset; SRAM; test approaches; test facilities test analysis;
D O I：
10.1109/TNS.2003.821402
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For space applications, can cost-effective and reliable heavy ion single-event effect, (SEE) testing still be carried out on commercially available, plastic packaged, high-density memories? Their complexity, architecture, and packaging assemblies as well as their short life cycle pose many practical problems that needs to be tackled. This paper summarizes steps taken by the European Space Agency in order to address these issues.
引用
收藏
页码：2322 / 2327
页数：6
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