X-ray reflectivity spectra of ultrathin films and nanometric multilayers: Experiment and simulation

被引：4
作者：
Bontempi, E
Depero, LE
Sangaletti, L
Giorgis, F
Pirri, CF
机构：
[1] Univ Brescia, Dipartimento Ingn Meccan, Lab Strutturist Chim, I-25123 Brescia, Italy
[2] Univ Brescia, Ist Nazl Fis Mat, I-25123 Brescia, Italy
[3] Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, I-25123 Brescia, Italy
[4] Univ Cattolica Sacro Cuore, Ist Nazl Fis Mat, I-25123 Brescia, Italy
[5] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
[6] Politecn Torino, Ist Nazl Fis Mat, I-10129 Turin, Italy
来源：
JOURNAL OF MATERIALS RESEARCH | 2001年 / 16卷 / 09期
关键词：
D O I：
10.1557/JMR.2001.0350
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous silicon-nitrogen (a-Si(1-x)N(x):H) alloys, thin films, and multilayers deposited by ultrahigh-vacuum plasma-enhanced chemical vapor deposition were studied and modeled by x-ray reflectivity (XRR) measurements. The analysis of XRR data obtained from the single-layer samples allowed us to calculate the density, thickness, and interface roughness of each layer. To check the deposition parameters, the deviation (t(nom)-t(exp))/(t(nom)) of the measured thickness t(exp) from the nominal thickness t(nom) was evaluated. Based on these results, a simulation of a multilayer film, obtained by deposition alternating stoichiometric and substoichimetric layers was carried out. It is shown that the best fitting is obtained by introducing into the XRR calculation a thickness distribution with a standard deviation related to the deviation (t(nom) - t(exp))/(t(nom)) estimated for the single layers.
引用
收藏
页码：2556 / 2561
页数：6
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