Optimized energy storage performances in morphotropic phase boundary (Na0.8K0.2)0.5Bi0.5TiO3-based lead-free ferroelectric thin films

被引:9
作者
Ding, Jie [1 ]
Zhang, Yiling [1 ]
Zhai, Yizan [1 ]
Su, Zhen [2 ]
Liu, Jinjun [1 ]
Chen, Jianwen [3 ]
Pan, Zhongbin [1 ]
机构
[1] Ningbo Univ, Sch Mat Sci & Chem Engn, Ningbo 315211, Zhejiang, Peoples R China
[2] Jiaxing Univ, China Australia Inst Adv Mat & Mfg, Jiaxing 34001, Zhejiang, Peoples R China
[3] Foshan Univ, Sch Elect & Informat Engn, Foshan 528000, Peoples R China
关键词
Lead-free; Thin films; Energy storage; Thermostabilization; ELECTRICAL-PROPERTIES; THERMAL-STABILITY; DENSITY; TEMPERATURE; CAPACITORS; EFFICIENCY; CERAMICS; PROPERTY; DIAGRAM;
D O I
10.1016/j.ceramint.2021.11.144
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As microelectronic devices move toward integration and miniaturization, the thin film capacitors with high energy density and charge/discharge efficiency have attracted immense interests in modern electrical energy storage systems. Despite morphotropic phase boundary (Na0.8K0.2)(0.5)Bi0.5TiO3-based lead-free materials with outstanding ferroelectric and piezoelectric properties, while large ferroelectric hysteresis with high remanent polarization (P-r) hinder to improve energy storage capability. Here, novel lead-free relaxor-ferroelectric (RFE) thin film capacitors with high energy density are successfully prepared in (1-x) (Na0.8K0.2)(0.5)Bi0.5TiO3-xBa(0.3)Sr(0.7)TiO(3) [(1-x)NKBT-xBST] systems. Introducing BST into the NKBT systems is expected to reduce remanent polarization (P-r) on account of coupling reestablishment of the polar nano-regions (PNRs) and improving the relaxation behavior. As a result, 0.6NKBT-0.4BST thin film exhibits high energy density (W-rec similar to 54.79 J/cm(3)) together with satisfactory efficiency (eta similar to 76.42%) at 3846 kV/cm. The stable energy storage performances are achieved within the scope of operating temperatures (20-200 degrees C) and fatigue cycles (1-10(7) cycles). This work furnishes a new technological way for the design of high energy-density thin film capacitors.
引用
收藏
页码:6062 / 6068
页数:7
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