Optimized energy storage performances in morphotropic phase boundary (Na0.8K0.2)0.5Bi0.5TiO3-based lead-free ferroelectric thin films

As microelectronic devices move toward integration and miniaturization, the thin film capacitors with high energy density and charge/discharge efficiency have attracted immense interests in modern electrical energy storage systems. Despite morphotropic phase boundary (Na0.8K0.2)(0.5)Bi0.5TiO3-based lead-free materials with outstanding ferroelectric and piezoelectric properties, while large ferroelectric hysteresis with high remanent polarization (P-r) hinder to improve energy storage capability. Here, novel lead-free relaxor-ferroelectric (RFE) thin film capacitors with high energy density are successfully prepared in (1-x) (Na0.8K0.2)(0.5)Bi0.5TiO3-xBa(0.3)Sr(0.7)TiO(3) [(1-x)NKBT-xBST] systems. Introducing BST into the NKBT systems is expected to reduce remanent polarization (P-r) on account of coupling reestablishment of the polar nano-regions (PNRs) and improving the relaxation behavior. As a result, 0.6NKBT-0.4BST thin film exhibits high energy density (W-rec similar to 54.79 J/cm(3)) together with satisfactory efficiency (eta similar to 76.42%) at 3846 kV/cm. The stable energy storage performances are achieved within the scope of operating temperatures (20-200 degrees C) and fatigue cycles (1-10(7) cycles). This work furnishes a new technological way for the design of high energy-density thin film capacitors.