Near-threshold gain mechanisms in GaN thin films in the temperature range of 20-700 K

被引：54
作者：
Bidnyk, S [1 ]
Schmidt, TJ
Little, BD
Song, JJ
机构：
[1] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA
[2] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期
关键词：
D O I：
10.1063/1.123114
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers in the temperature range of 20-700 K. High-quality single-crystal GaN films grown on 6H-SiC and (0001) sapphire were used in this study. We show that the dominant near-threshold gain mechanism is inelastic exciton-exciton scattering for temperatures below similar to 150 K, characterized by band-filling phenomena and a low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge-related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. Based on our results, we discuss possibilities of reducing the room-temperature lasing threshold in laser diode structures with a GaN active medium. (C) 1999 American Institute of Physics. [S0003-6951(99)01401-1].
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页码：1 / 3
页数：3
相关论文
共 19 条
  • [1] AMANO H, 1995, P TOP WORKSH 3 5 NIT, P193
  • [2] High-temperature stimulated emission studies of MOCVD-grown GaN films
    Bidnyk, S
    Little, BD
    Schmidt, TJ
    Krasinski, J
    Song, JJ
    [J]. OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 35 - 43
  • [3] Study of surface-emitted stimulated emission in GaN
    Bidnyk, S
    Schmidt, TJ
    Park, GH
    Song, JJ
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (06) : 729 - 731
  • [4] STIMULATED-EMISSION OF GAN UNDER HIGH ONE AND 2 QUANTUM EXCITATION
    CATALANO, IM
    CINGOLANI, A
    FERRARA, M
    LUGARA, M
    MINAFRA, A
    [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (05) : 349 - 351
  • [5] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE
    DINGLE, R
    SHAKLEE, KL
    LEHENY, RF
    ZETTERSTROM, RB
    [J]. APPLIED PHYSICS LETTERS, 1971, 19 (01) : 5 - +
  • [6] DINGLE R, 1987, SEMICONDUCT SEMIMET, V24, P18
  • [7] Temperature-dependent absorption measurements of excitons in GaN epilayers
    Fischer, AJ
    Shan, W
    Song, JJ
    Chang, YC
    Horning, R
    Goldenberg, B
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (14) : 1981 - 1983
  • [8] A comparison of lasing mechanisms in ZnSe and GaAs
    Galbraith, I
    Koch, SW
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 667 - 671
  • [9] Mechanisms of optical gain in cubic gallium nitrite
    Holst, J
    Eckey, L
    Hoffmann, A
    Broser, I
    Schottker, B
    As, DJ
    Schikora, D
    Lischka, K
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (12) : 1439 - 1441
  • [10] ROOM-TEMPERATURE BLUE LASING ACTION IN (ZN,CD)SE/ZNSE OPTICALLY PUMPED MULTIPLE QUANTUM-WELL STRUCTURES ON LATTICE-MATCHED (GA,IN)AS SUBSTRATES
    JEON, H
    DING, J
    NURMIKKO, AV
    LUO, H
    SAMARTH, N
    FURDYNA, JK
    BONNER, WA
    NAHORY, RE
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (23) : 2413 - 2415
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