An organic light-emitting device with an internal light extraction layer annealed with the intense pulsed light was fabricated. The internal light extraction layer was fabricated by annealing a dispersed solution of high-refractive index nano-particles (TiO2 and a TiO2:ZnO blend) using high-intensity pulsed light capable of low-temperature and high-speed processing. The differences in morphology between samples annealed by intense pulsed light (IPL) and that annealed by conventional heat treatment were studied. IPL annealed devices showed similar performance to that of thermally annealed devices. A planarization layer was required due to the roughness of the nano-size particles. A better heat-resistant and chemical-resistant polymer, poly(9-vinylcarbazole), was used in the planarization layer. The light extraction efficiency increased about four times in glass substrate devices and approximately doubled in plastic (PEN) substrate devices.
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Zhou, Yubu
Gao, Huayu
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Gao, Huayu
Wang, Jing
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Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, State Key Lab Adv Displays & Optoelect Technol, Hong Kong 999077, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Wang, Jing
Yeung, Fion Sze Yan
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Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, State Key Lab Adv Displays & Optoelect Technol, Hong Kong 999077, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Yeung, Fion Sze Yan
Lin, Shenghuang
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Songshan Lake Mat Lab, Dongguan 523808, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Lin, Shenghuang
Li, Xianbo
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Li, Xianbo
Liao, Shaolin
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USASun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Liao, Shaolin
Luo, Dongxiang
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Guangzhou Univ, Huangpu Hydrogen Innovat Ctr, Sch Chem & Chem Engn, Guangzhou Key Lab Clean Energy & Mat, Guangzhou 510006, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Luo, Dongxiang
Kwok, Hoi Sing
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Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, State Key Lab Adv Displays & Optoelect Technol, Hong Kong 999077, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Kwok, Hoi Sing
Liu, Baiquan
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China