Self-powered near-infrared MoS2/n-Si photodetectors with Al2O3 interface passivation

被引：17
作者：
Xu, Yajun [1 ]
Shen, Honglie [1 ,2 ]
Wu, Di [3 ,4 ]
Zhao, Qichen [1 ]
Wang, Zehui [1 ]
Ge, Jiawei [1 ]
Zhang, Wei [1 ]
机构：
[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Jiangsu Key Lab Mat & Technol Energy Convers, Nanjing 211106, Peoples R China
[2] Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Peoples R China
[3] Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Zhengzhou 450052, Henan, Peoples R China
[4] Zhengzhou Univ, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Henan, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2022年 / 902卷
基金：
中国国家自然科学基金;
关键词：
MoS2/n-Si Heterojunction; MoO3 precursor layer; ALD-deposited Al2O3; Self-powered; Photodetectors; BROAD-BAND; MOS2; HETEROJUNCTION; GROWTH;
D O I：
10.1016/j.jallcom.2022.163878
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Due to their excellent light absorption and photovoltaic effects, transition metal dichalcogenide-based heterojunctions have been widely investigated as materials for optoelectronic devices. This work presented a MoS2 film preparation process using electron beam evaporated MoO3 films as the precursor layer. The prepared MoS2 film was used in the self-powered MoS2/Al2O3/n-Si photodetector, which showed high responsivity (1.15 A W-1), normalized detectivity (1.28 x 10(11) Hz(1/2) cm/W) and photoresponse (tau(r) = 28 mu s) without external bias. Besides, the photodetector exhibited a large frequency-photoresponse range (up close to 100 kHz). Moreover, attributed to the excellent MoS2 quality and the effective interface passivation by ALD-deposited Al2O3, the high-speed photoresponse of the photodetector was realized. These results demonstrated the potential of applying MoS2 material prepared from electron beam evaporated MoO3 precursor layers in the high-frequency and fast photoresponse photodetectors. (C) 2022 Elsevier B.V. All rights reserved.
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页数：9
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