Accessing the transport properties of graphene and its multilayers at high carrier density

被引:287
作者
Ye, Jianting [1 ,2 ,3 ]
Craciun, Monica F. [4 ]
Koshino, Mikito [6 ]
Russo, Saverio [5 ]
Inoue, Seiji [1 ]
Yuan, Hongtao [1 ,2 ,3 ]
Shimotani, Hidekazu [1 ,2 ,3 ]
Morpurgo, Alberto F. [7 ,8 ]
Iwasa, Yoshihiro [2 ,3 ,9 ]
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan
[3] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
[4] Univ Exeter, Sch Engn, Ctr Graphene Sci, Exeter EX4 4QL, Devon, England
[5] Univ Exeter, Sch Phys, Ctr Graphene Sci, Exeter EX4 4QL, Devon, England
[6] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
[7] Univ Geneva, Dept Condensed Matter Phys, CH-1211 Geneva, Switzerland
[8] Univ Geneva, Appl Phys Grp, CH-1211 Geneva, Switzerland
[9] RIKEN, Correlated Elect Res Grp, Wako, Saitama 3510198, Japan
基金
瑞士国家科学基金会; 日本科学技术振兴机构;
关键词
FIELD-EFFECT TRANSISTORS; ELECTRON-SCATTERING; SUPERCONDUCTIVITY; CAPACITANCE; LIQUID; FILM;
D O I
10.1073/pnas.1018388108
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
引用
收藏
页码:13002 / 13006
页数:5
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