Metalorganic vapor phase epitaxial growth parameter dependence of phase separation in miscibility gap of InGaAsP

被引：5
|
作者：
Ono, Kenichi [1 ]
Takemi, Masayoshi [1 ]
Fujiwara, Yasufumi [2 ]
机构：
[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Itami, Hyogo 6648641, Japan
[2] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 02期
关键词：
MOVPE; InGaAsP; miscibility gap; growth condition; phase separation;
D O I：
10.1143/JJAP.47.896
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The generation mechanism of the immiscibility of InGaAsP grown by metalorganic vapor phase epitaxy (MOVPE) is investigated. The growth condition dependence of the immiscibility is examined in detail using particular photoluminescence (PL) characteristics observed in the boundary composition between stable and unstable compositional regions. A lower growth rate or a larger V/III ratio is effective for suppressing phase separation. To explain this growth condition dependence, some factors related to surface energy should be taken into consideration.
引用
收藏
页码：896 / 898
页数：3
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