Magnetoresistance signature of resonant states in electromigrated Ni nanocontacts

被引：7

作者：

Beaufrand, J. -B. ^{[1
]}

Dayen, J. -F. ^{[1
]}

Kemp, N. T. ^{[2
]}

Sokolov, A. ^{[3
]}

Doudin, B. ^{[1
]}

机构：

[1] IPCMS DMONS, UMR 7504, F-67034 Strasbourg 2, France

[2] Univ Hull, Dept Phys, Kingston Upon Hull HU6 7RX, Yorks, England

[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 14期

基金：

美国国家科学基金会;

关键词：

JUNCTIONS; TRANSPORT;

D O I：

10.1063/1.3576939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fundamental insight is reported into magnetoresistance properties of ballistic-type atomic size Ni nanojunctions obtained at low temperatures. Feedback-controlled electromigration was used to reveal the ballistic nature of the transport and stabilize samples of conductance values in the range of G(0) (G(0) = 2e(2)/h). Bias voltage dependent measurements identify a clear magnetoresistance fingerprint of resonant tunneling, revealing that localized states in the nanojunctions can be responsible for nonlinear behavior in the IV curves and the related magnetoresistance properties. (C) 2011 American Institute of Physics. [doi:10.1063/1.3576939]

引用

页数：3

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