Orbital Hall insulating phase in transition metal dichalcogenide monolayers

被引:66
作者
Canonico, Luis M. [1 ]
Cysne, Tarik P. [1 ]
Molina-Sanchez, Alejandro [2 ]
Muniz, R. B. [1 ]
Rappoport, Tatiana G. [3 ,4 ,5 ]
机构
[1] Univ Fed Fluminense, Inst Fis, BR-24210346 Niteroi, RJ, Brazil
[2] Intemat Iberian Nanotechnol Lab INL, Avda Mestre Jose Veiga S-N, P-4715330 Braga, Portugal
[3] Univ Fed Rio de Janeiro, Inst Fis, Caixa Postal 68528, BR-21941972 Rio De Janeiro, RJ, Brazil
[4] Univ Minho, Dept Phys, P-4710057 Braga, Portugal
[5] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal
基金
巴西圣保罗研究基金会;
关键词
GRAPHENE;
D O I
10.1103/PhysRevB.101.161409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that H-phase transition metal dichalcogenide (TMD) monolayers, such as MoS2 and WSe2, are orbital Hall insulators. They present very large orbital Hall conductivity plateaus in their semiconducting gap, where the spin Hall conductivity vanishes. Our results open the possibility of using TMDs for orbital current injection and orbital torque transfers that surpass their spin-counterparts in spin-orbitronics devices. The orbital Hall effect in TMD monolayers occurs even in the absence of spin-orbit coupling. It can be linked to exotic momentum-space Dresselhaus-like orbital textures, analogous to the spin-momentum locking in two-dimensional Dirac fermions that arise from a combination of orbital attributes and lattice symmetry.
引用
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页数:6
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