Charge-carrier injection into CuPc thin films:: a scanning tunneling microscopy study

被引:35
作者
Alvarado, SF [1 ]
Rossi, L [1 ]
Müller, P [1 ]
Riess, W [1 ]
机构
[1] IBM Res Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
关键词
copper phthalocyanine; charge-carrier injection barrier; scanning tunnel microscopy; spectroscopy;
D O I
10.1016/S0379-6779(00)01372-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Injection of charge carriers into the LUMO and HOMO levels of copper phthalocyanine (CuPc) is investigated by scanning tunneling microscopy (STM) and spectroscopy. The threshold for injection of charge carriers emitted by the tip of the STM allows us to determine the so-called single-particle band gap (E-gsp) Of CuPc polymorphs as well as the band edge alignment with respect to the Fermi level of the Au(1 1 1) substrate. We find E-gsp values significantly lower than the optical band gap. This indicates the presence of intermolecular interactions, giving rise to in-gap states that can play a predominant role in controlling injection as well as transport properties. The lowest value of E-gsp is found for the crystalline phases of CuPc obtained by thermal annealing, whereas the largest band gap and inferior charge transport properties are found for samples grown on substrates at room temperature. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:73 / 77
页数:5
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