Magnetic anisotropies in GaAs/Fe(001) structures

被引：7

作者：

Kardasz, Bartek ^{[1
]}

Mosendz, Oleksandr ^{[2
]}

Heinrich, Bret ^{[1
]}

Przybylski, Marek ^{[3
]}

Kirschner, Juergen ^{[3
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[2] Argonne Natl Lab, Mat Sci Devis, Argonne, IL 60439 USA

[3] Max Planck Inst Mikrostrukturphys, Halle, Germany

来源：

INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009) | 2010年 / 200卷

关键词：

EPITAXIAL FE FILMS; GAAS(001);

D O I：

10.1088/1742-6596/200/7/072046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fe ultrathin films on GaAs(001) substrates were prepared by thermal deposition (TD) and pulse laser deposition (PLD) using MBE. Conversion electron Mossbauer spectroscopy (CEMS) was employed to investigate the atomic arrangement of Fe at the GaAs(001) interface. The magnetic anisotropies were studied by FMR. They have strong interface and bulk contributions which undergo several transitions with increasing film thickness. The most pronounced effect was observed in the in-plane interface uniaxial anisotropy K-parallel to,u(int). K-parallel to,u(int) = 0.10 ergs/cm(2) for the TD films thinner than 30ML. For thicker samples it decreased to K-parallel to,u(int) = 0.03 ergs/cm(2) which is equal to that for the PLD samples. It will be shown that these transitions in magnetic anisotropies are driven by B-1 and B-2 magneto-elastic energies.

引用

页数：4

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