Effects of methane flux on structural and transport properties of CVD-grown graphene films

被引：33
|
作者：
Wang, Z. G. [1 ]
Chen, Y. F. [1 ]
Li, P. J. [1 ]
Hao, X. [1 ]
Fu, Y. [1 ]
Chen, K. [1 ]
Huang, L. X. [1 ]
Liu, D. [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
VACUUM | 2012年 / 86卷 / 07期
关键词：
Graphene; Methane flux; Chemical vapor deposition; FEW-LAYER GRAPHENE; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; SUSPENDED GRAPHENE; SINGLE; BILAYER;
D O I：
10.1016/j.vacuum.2011.05.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Large area, single-layer graphene films were synthesized on copper foils by chemical vapor deposition. We have investigated the effects of methane flux on structural and transport properties of graphene. Raman spectra and electrical results reveal that methane flux has almost no influence on the thickness of graphene, but clearly influences the structural defects of graphene. In addition, graphene field effect transistors with a gate length of 10 mu m were fabricated, exhibiting obvious field effects and p-type characteristics. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：895 / 898
页数：4
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