Carrier Dynamics and Defects in MOVPE-Grown Bulk InGaAs Layers with Metamorphic InGaAs and InGaPSb Buffer Layers for Solar Cells

被引：0

作者：

Sin, Yongkun ^{[1
]}

LaLumondiere, Stephen D. ^{[1
]}

Foran, Brendan J. ^{[1
]}

Lotshaw, William T. ^{[1
]}

Moss, Steven C. ^{[1
]}

Kim, Tae Wan ^{[2
]}

Dudley, Peter ^{[2
]}

Kirch, Jeremy ^{[2
]}

Ruder, Steven ^{[3
]}

Mawst, Luke J. ^{[2
]}

Kuech, Thomas F. ^{[3
]}

机构：

[1] Aerosp Corp, Elect & Photon Lab, El Segundo, CA 90245 USA

[2] Aerosp Corp, Dept Elect & Comp Engn, El Segundo, CA 90245 USA

[3] Aerosp Corp, Dept Chem & Biol Engn, El Segundo, CA 90245 USA

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XX | 2012年 / 8255卷

关键词：

Solar cells; metamorphic buffer layers; carrier dynamics; defects; MOVPE; TR-PL; TEM;

D O I：

10.1117/12.906424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E-g= similar to 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in InxGa1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.

引用

页数：12

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