Cathodoluminescence studies of spontaneously formed low-dimensional AlGaN structures

被引：0
|
作者：
Petersson, A
Gustafsson, A
Tanaka, S
Aoyagi, Y
Samuelson, L
机构：
[1] Univ Lund, Solid State Phys Nanometer Struct Consortium, S-21100 Lund, Sweden
[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 35101, Japan
来源：
PHYSICA SCRIPTA | 1999年 / T79卷
关键词：
D O I：
10.1238/Physica.Topical.079a00056
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Epitaxial films of AlGaN grown on SiC have been investigated using cathodoluminescence, photoluminescence, seaming electron microscope and energy dispersive X-ray emission (EDX). It was found that the films were smooth and homogeneous except for occasional pits, which display characteristic luminescence. EDX measurements reveal that the central part of the pits are Ga rich. A model for the structure of the pits and their formation mechanism is presented.
引用
收藏
页码：56 / 59
页数：4
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