Ultraviolet and visible electroluminescence from n-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes

被引：89

作者：

Tan, S. T. ^{[1
,2
]}

Sun, X. W. ^{[1
,2
]}

Zhao, J. L. ^{[2
]}

Iwan, S. ^{[2
]}

Cen, Z. H. ^{[2
]}

Chen, T. P. ^{[2
]}

Ye, J. D. ^{[1
]}

Lo, G. Q. ^{[1
]}

Kwong, D. L. ^{[1
]}

Teo, K. L. ^{[3
,4
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] ASTAR, Data Storage Inst, Singapore 117608, Singapore

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 01期

关键词：

D O I：

10.1063/1.2957465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

n-ZnO/SiOx/n-Si and n-ZnO/SiOx/p-Si heterostructured light-emitting diodes have been fabricated using metal-organic chemical-vapor deposition for a comparison study. n-ZnO/SiOx/p-Si heterostructures show diodelike rectifying current-voltage characteristic with low breakdown voltage, while n-ZnO/SiOx/n-Si heterostructures show symmetric nonlinear current-voltage behavior due to the double Schottky barriers at the interface. Both types of diodes emit light when a positive bias applied at Si side. Ultraviolet emission at similar to 390 nm with an orange-emission centered at similar to 600 nm were observed in electroluminescence spectra of n-ZnO/SiOx/n-Si diodes, while whitish emission centered at similar to 520 nm was observed for n-ZnO/SiOx/p-Si diodes. The emission mechanisms were discussed. (C) 2008 American Institute Of Physics.

引用

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