Band alignment at interfaces of two-dimensional materials: internal photoemission analysis

被引：12

作者：

Afanas'ev, Valery V. ^{[1
]}

Delie, Gilles ^{[1
]}

Houssa, Michel ^{[1
]}

Shlyakhov, Ilya ^{[1
]}

Stesmans, Andre ^{[1
]}

Trepalin, Vadim ^{[1
]}

机构：

[1] Univ Leuven, Lab Semicond Phys, Dept Phys & Astron, Leuven, Belgium

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2020年 / 32卷 / 41期

关键词：

two-dimensional material; interface barrier; internal photoemission; band offset; FIELD-EFFECT TRANSISTOR; MOS2; TRANSISTORS; SILICON DIOXIDE; MONOLAYER MOS2; WORK-FUNCTION; LAYER MOS2; GRAPHENE; SURFACE; METAL; WATER;

D O I：

10.1088/1361-648X/ab937c

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The article overviews experimental results obtained by applying internal photoemission (IPE) spectroscopy methods to characterize electron states in single- or few-monolayer thick two-dimensional materials and at their interfaces. Several conducting (graphene) and semiconducting (transitional metal dichalcogenides MoS2, WS2, MoSe2, and WSe2) films on top of thermal SiO(2)have been analyzed by IPE, which reveals significant sensitivity of interface band offsets and barriers to the details of the material and interface fabrication, indicating violation of the Schottky-Mott rule. This variability is associated with charges and dipoles formed at the interfaces with van der Waals bonding as opposed to the chemically bonded interfaces of three-dimensional semiconductors and metals. Chemical modification of the underlying SiO(2)surface is shown to be a significant factor, affecting interface barriers due to violation of the interface electroneutrality.

引用

页数：18

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