Temperature measurements of semiconductor devices - A review

被引：269
作者：
Blackburn, DL [1 ]
机构：
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
来源：
TWENTIETH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2004 | 2004年
关键词：
electrical; measurements; optical; semiconductor; temperature;
D O I：
10.1109/STHERM.2004.1291304
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
There are numerous methods for measuring the temperature of an operating semiconductor device. The methods can be broadly placed into three generic categories: electrical, optical, and physically contacting. The fundamentals underlying each of the categories are discussed, and a review of the variety of techniques within each category is given. Some of the advantages and disadvantages as well as the spatial, time, and temperature resolution are also provided.
引用
收藏
页码：70 / 80
页数：11
相关论文
共 88 条
  • [81] DETERMINATION OF JUNCTION TEMPERATURE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY ELECTRICAL MEASUREMENT
    WALDROP, JR
    WANG, KC
    ASBECK, PM
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (05) : 1248 - 1250
  • [82] WEI J, 1999, P IEEE INT EL DEV M, P175
  • [83] MODULATED THERMOREFLECTANCE IMAGING OF HIDDEN ELECTRIC-CURRENT DISTRIBUTIONS IN THIN-FILM LAYERED STRUCTURES
    WELSCH, E
    REICHLING, M
    GOBEL, C
    SCHAFER, D
    MATTHIAS, E
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (08) : 916 - 918
  • [84] SCANNING THERMAL PROFILER
    WILLIAMS, CC
    WICKRAMASINGHE, HK
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1587 - 1589
  • [85] THERMAL SENSORS FOR INVESTIGATION OF HEAT-TRANSFER IN SCANNING PROBE MICROSCOPY
    XU, JB
    LAUGER, K
    DRANSFELD, K
    WILSON, IH
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (07) : 2262 - 2266
  • [86] YASUDA A, 1991, INT REL PHY, P245, DOI 10.1109/RELPHY.1991.146022
  • [87] Thermal impedance extraction for bipolar transistors
    Zweidinger, DT
    Fox, RM
    Brodsky, JS
    Jung, T
    Lee, SG
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) : 342 - 346
  • [88] 1988, JEDEC PUBLICATION
123456789