Organic modified GaAs(100) Schottky contacts

被引:0
作者
Lindner, T [1 ]
Kampen, TU [1 ]
Park, S [1 ]
Zahn, DRT [1 ]
机构
[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
来源
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigated the current-voltage-characteristics of Ag/n-GaAs(100) diodes with organic interlayers of various film thickness. The organic semiconductor 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) serves as the organic film. The results can be described in terms of a model including thermionic emission and space-charge-limited currents. At low current densities thermionic emission over the organic/inorganic contact barrier dominates, while at high current densities space-charge effects govern the charge transport. The effective barrier heights of Ag/PTCDA/n-GaAs(100) diodes decrease with increasing organic film thickness.
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页码:415 / 416
页数:2
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