van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

被引：25

作者：

Paul, Rajrupa ^{[1
]}

Humblot, Nicolas ^{[1
,3
]}

Steinvall, Simon Escobar ^{[1
]}

Stutz, Elias Zsolt ^{[1
]}

Joglekar, Shreyas Sanjay ^{[1
]}

Leran, Jean-Baptiste ^{[1
]}

Zamani, Mahdi ^{[1
]}

Cayron, Cyril ^{[4
]}

Loge, Roland ^{[4
]}

del Aguila, Andres Granados ^{[3
]}

Xiong, Qihua ^{[3
]}

Fontcuberta i Morral, Anna ^{[1
,2
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Semicond Mat, Inst Mat, Sch Engn, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Phys, Sch Basic Sci, CH-1015 Lausanne, Switzerland

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[4] Ecole Polytech Fed Lausanne, Lab Thermomech Met, Sch Engn, CH-2002 Neuchatel, Switzerland

来源：

CRYSTAL GROWTH & DESIGN | 2020年 / 20卷 / 06期

关键词：

MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; SOLAR-CELLS; GROWTH; TRANSITIONS; FILMS; GAAS; PHOTOLUMINESCENCE; ORIENTATION; PERFORMANCE;

D O I：

10.1021/acs.cgd.0c00125

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we report the van der Waals epitaxy of tetragonal Zn3P2 (alpha-Zn3P2) on graphene using molecular beam epitaxy. The growth on graphene progresses by the formation of Zn3P2 triangular flakes, which merge to form a thin film with a strong (101) crystallographic texture. Photoluminescence from the Zn3P2 thin films is consistent with previously reported Zn3P2. This work demonstrates that the need for a lattice-matched substrate can be circumvented by the use of graphene as a substrate. Moreover, the synthesis of high-quality Zn3P2 flakes and films on graphene brings new material choices for low-cost photovoltaic applications.

引用

页码：3816 / 3825

页数：10

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