Water Stress Corrosion in Bonded Structures

被引：6

作者：

Fournel, F. ^{[1
,2
]}

Martin-Cocher, C. ^{[1
,2
]}

Radisson, D. ^{[1
,2
]}

Larrey, V. ^{[1
,2
]}

Beche, E. ^{[1
,2
]}

Morales, C. ^{[1
,2
]}

Delean, P. A. ^{[1
,2
]}

Rieutord, F. ^{[1
,3
]}

Moriceau, H. ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA Grenoble, Leti, F-38054 Grenoble 9, France

[3] CEA, INAC, F-38054 Grenoble 9, France

来源：

SEMICONDUCTOR WAFER BONDING 13: SCIENCE, TECHNOLOGY, AND APPLICATIONS | 2014年 / 64卷 / 05期

关键词：

CRACK-GROWTH;

D O I：

10.1149/06405.0121ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Direct bonding is now a well-known technique to join two flat surfaces without any additional material. This technique is used in many applications and especially in SOI (Silicon-On-Insulator) elaboration or in some backside imager manufacturing processes which are now almost in mass production. Direct bonding mechanism study is then very important in order to clearly understand this bonding behavior. Especially in the case of silicon or silicon dioxide hydrophilic surface, the role of water is essential. Water could lead to lots of different reactions at the bonding interface and especially the water stress corrosion could play an important role in the direct bonding mechanism.

引用

页码：121 / 132

页数：12

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