Beyond Langevin Recombination: How Equilibrium Between Free Carriers and Charge Transfer States Determines the Open-Circuit Voltage of Organic Solar Cells
被引:268
作者:
Burke, Timothy M.
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Stanford Univ, Dept Mat Sci, Stanford, CA 94022 USAStanford Univ, Dept Mat Sci, Stanford, CA 94022 USA
Burke, Timothy M.
[1
]
Sweetnam, Sean
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Stanford Univ, Dept Mat Sci, Stanford, CA 94022 USAStanford Univ, Dept Mat Sci, Stanford, CA 94022 USA
Sweetnam, Sean
[1
]
Vandewal, Koen
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机构:
Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, GermanyStanford Univ, Dept Mat Sci, Stanford, CA 94022 USA
Vandewal, Koen
[2
]
McGehee, Michael D.
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机构:
Stanford Univ, Dept Mat Sci, Stanford, CA 94022 USAStanford Univ, Dept Mat Sci, Stanford, CA 94022 USA
McGehee, Michael D.
[1
]
机构:
[1] Stanford Univ, Dept Mat Sci, Stanford, CA 94022 USA
Organic solar cells lag behind their inorganic counterparts in efficiency due largely to low open-circuit voltages (V-oc). In this work, a comprehensive framework for understanding and improving the open-circuit voltage of organic solar cells is developed based on equilibrium between charge transfer (CT) states and free carriers. It is first shown that the ubiquitous reduced Langevin recombination observed in organic solar cells implies equilibrium and then statistical mechanics is used to calculate the CT state population density at each voltage. This general result permits the quantitative assignment of V-oc losses to a combination of interfacial energetic disorder, non-negligible CT state binding energies, large degrees of mixing, and sub-ns recombination at the donor/acceptor interface. To quantify the impact of energetic disorder, a new temperature-dependent CT state absorption measurement is developed. By analyzing how the apparent CT energy varies with temperature, the interfacial disorder can be directly extracted. 63-104 meV of disorder is found in five systems, contributing 75-210 mV of V-oc loss. This work provides an intuitive explanation for why qV(oc) is almost always 500-700 meV below the energy of the CT state and shows how the voltage can be improved.
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Bartelt, Jonathan A.
Beiley, Zach M.
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机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Beiley, Zach M.
Hoke, Eric T.
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h-index: 0
机构:
Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Hoke, Eric T.
Mateker, William R.
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h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Mateker, William R.
Douglas, Jessica D.
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h-index: 0
机构:
Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Douglas, Jessica D.
Collins, Brian A.
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h-index: 0
机构:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Collins, Brian A.
Tumbleston, John R.
论文数: 0引用数: 0
h-index: 0
机构:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Tumbleston, John R.
Graham, Kenneth R.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi ArabiaStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Graham, Kenneth R.
Amassian, Aram
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机构:
King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi ArabiaStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Amassian, Aram
Ade, Harald
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N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Ade, Harald
Frechet, Jean M. J.
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机构:
Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi ArabiaStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Frechet, Jean M. J.
Toney, Michael F.
论文数: 0引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Toney, Michael F.
McGehee, Michael D.
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h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
机构:
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Seagate Technol, Recording Head Operat, Bloomington, MN 55435 USAUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Chen, Song
Tsang, Sai-Wing
论文数: 0引用数: 0
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机构:
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R ChinaUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Tsang, Sai-Wing
Lai, Tzung-Han
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机构:
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USAUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Lai, Tzung-Han
Reynolds, John R.
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机构:
Georgia Inst Technol, Dept Chem & Biochem, Atlanta, GA 30332 USA
Georgia Inst Technol, Dept Mat Sci & Engn, Atlanta, GA 30332 USAUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Reynolds, John R.
So, Franky
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h-index: 0
机构:
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USAUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Bartelt, Jonathan A.
Beiley, Zach M.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Beiley, Zach M.
Hoke, Eric T.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Hoke, Eric T.
Mateker, William R.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Mateker, William R.
Douglas, Jessica D.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Douglas, Jessica D.
Collins, Brian A.
论文数: 0引用数: 0
h-index: 0
机构:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Collins, Brian A.
Tumbleston, John R.
论文数: 0引用数: 0
h-index: 0
机构:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Tumbleston, John R.
Graham, Kenneth R.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi ArabiaStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Graham, Kenneth R.
Amassian, Aram
论文数: 0引用数: 0
h-index: 0
机构:
King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi ArabiaStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Amassian, Aram
Ade, Harald
论文数: 0引用数: 0
h-index: 0
机构:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Ade, Harald
Frechet, Jean M. J.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi ArabiaStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Frechet, Jean M. J.
Toney, Michael F.
论文数: 0引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Toney, Michael F.
McGehee, Michael D.
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
机构:
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Seagate Technol, Recording Head Operat, Bloomington, MN 55435 USAUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Chen, Song
Tsang, Sai-Wing
论文数: 0引用数: 0
h-index: 0
机构:
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R ChinaUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Tsang, Sai-Wing
Lai, Tzung-Han
论文数: 0引用数: 0
h-index: 0
机构:
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USAUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Lai, Tzung-Han
Reynolds, John R.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Dept Chem & Biochem, Atlanta, GA 30332 USA
Georgia Inst Technol, Dept Mat Sci & Engn, Atlanta, GA 30332 USAUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
Reynolds, John R.
So, Franky
论文数: 0引用数: 0
h-index: 0
机构:
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USAUniv Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA