Control of the stress field on shallow seafloor hydrothermal paths: A case study of the TAG hydrothermal field

被引:0
作者
Wang, Mingxu [1 ,2 ]
Tao, Chunhui [1 ,2 ,3 ]
Lei, Chao [4 ]
Wang, Hanchuang [2 ,3 ]
Chen, Ming [1 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Oceanog, Shanghai 200030, Peoples R China
[2] Minist Nat Resources, Key Lab Submarine Geosci, Hangzhou 310012, Peoples R China
[3] Minist Nat Resources, Inst Oceanog 2, Hangzhou 310012, Peoples R China
[4] China Univ Geosci, Coll Marine Sci & Technol, Wuhan 430074, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
stress field; hydrothermal paths; TAG hydrothermal field; numerical modelling; MID-ATLANTIC RIDGE; STATE; CIRCULATION; INSIGHTS; CRACKING; MODEL; MOUND;
D O I
10.1007/s13131-022-2003-7
中图分类号
P7 [海洋学];
学科分类号
0707 ;
摘要
The stress state and rock mechanical properties govern the growth of faults and fractures, which constitute shallow hydrothermal pathways and control the distribution of seafloor massive sulfide (SMS) mounds in the seafloor hydrothermal field. The stress field has an important influence on the formation and persistence of hydrothermal pathways. Based on multibeam bathymetric data from the Trans-Atlantic Geotraverse (TAG) field, we establish two three-dimensional geological models with different scales to simulate the stress field, which investigate the characteristics of hydrothermal pathways and associated SMS mounds. The simulation results show that oblique faults and fissures form in the tensile stress zone and that mounds, including active and inactive hydrothermal mounds form in the compressive stress zone. Fault activity, which is related to the stress field, affects the opening and closing of hydrothermal channels and changes the permeability structure of subseafloor wall rock. Therefore, the stress field controls the development and persistence of shallow hydrothermal pathways. The features of shallow hydrothermal pathways in the stress field can provide geomechanical information that is useful for identifying favorable zone for SMS deposit formation.
引用
收藏
页码:117 / 126
页数:10
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