Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application

被引:37
作者
Bae, Hagyoul [1 ]
Lee, Byung-Hyun [1 ]
Lee, Dongil [1 ]
Seol, Myeong-Lok [2 ]
Kim, Daewon [1 ]
Han, Jin-Woo [2 ]
Kim, Choong-Ki [1 ]
Jeon, Seung-Bae [1 ]
Ahn, Daechul [1 ]
Park, Sang-Jae [1 ]
Park, Jun-Young [1 ]
Choi, Yang-Kyu [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, 291 Daehak Ro, Daejeon 34141, South Korea
[2] NASA, Ctr Nanotechnol, Ames Res Ctr, Moffett Field, CA 94035 USA
基金
新加坡国家研究基金会;
关键词
NONVOLATILE MEMORY;
D O I
10.1038/srep38324
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We report the transient memory device by means of a water soluble SSG (solid sodium with glycerine) paper. This material has a hydroscopic property hence it can be soluble in water. In terms of physical security of memory devices, prompt abrogation of a memory device which stored a large number of data is crucial when it is stolen because all of things have identified information in the memory device. By utilizing the SSG paper as a substrate, we fabricated a disposable resistive random access memory (RRAM) which has good data retention of longer than 106 seconds and cycling endurance of 300 cycles. This memory device is dissolved within 10 seconds thus it can never be recovered or replicated. By employing direct printing but not lithography technology to aim low cost and disposable applications, the memory capacity tends to be limited less than kilo-bits. However, unlike high memory capacity demand for consumer electronics, the proposed device is targeting for security applications. With this regards, the sub-kilobit memory capacity should find the applications such as one-time usable personal identification, authentication code storage, cryptography key, and smart delivery tag. This aspect is attractive for security and protection system against unauthorized accessibility.
引用
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页数:7
相关论文
共 44 条
[1]   Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM [J].
Cagli, C. ;
Buckley, J. ;
Jousseaume, V. ;
Cabout, T. ;
Salaun, A. ;
Grampeix, H. ;
Nodin, J. F. ;
Feldis, H. ;
Persico, A. ;
Cluzel, J. ;
Lorenzi, P. ;
Massari, L. ;
Rao, R. ;
Irrera, F. ;
Aussenac, F. ;
Carabasse, C. ;
Coue, M. ;
Calka, P. ;
Martinez, E. ;
Perniola, L. ;
Blaise, P. ;
Fang, Z. ;
Yu, Y. H. ;
Ghibaudo, G. ;
Deleruyelle, D. ;
Bocquet, M. ;
Mueller, C. ;
Padovani, A. ;
Pirrotta, O. ;
Vandelli, L. ;
Larcher, L. ;
Reimbold, G. ;
de Salvo, B. .
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
[2]   Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices [J].
Celano, Umberto ;
Goux, Ludovic ;
Belmonte, Attilio ;
Opsomer, Karl ;
Franquet, Alexis ;
Schulze, Andreas ;
Detavernier, Christophe ;
Richard, Olivier ;
Bender, Hugo ;
Jurczak, Malgorzata ;
Vandervorst, Wilfried .
NANO LETTERS, 2014, 14 (05) :2401-2406
[3]   Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories [J].
Chen, Jui-Yuan ;
Hsin, Cheng-Lun ;
Huang, Chun-Wei ;
Chiu, Chung-Hua ;
Huang, Yu-Ting ;
Lin, Su-Jien ;
Wu, Wen-Wei ;
Chen, Lih-Juann .
NANO LETTERS, 2013, 13 (08) :3671-3677
[4]   An Ultrathin Forming-Free HfOx Resistance Memory With Excellent Electrical Performance [J].
Chen, Yu-Sheng ;
Lee, Heng-Yuan ;
Chen, Pang-Shiu ;
Wu, Tai-Yuan ;
Wang, Ching-Chiun ;
Tzeng, Pei-Jer ;
Chen, Frederick ;
Tsai, Ming-Jinn ;
Lien, Chenhsin .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) :1473-1475
[5]   Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance [J].
Cheng, Chun-Hu ;
Yeh, Fon-Shan ;
Chin, Albert .
ADVANCED MATERIALS, 2011, 23 (07) :902-+
[6]   HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity [J].
Fang, Z. ;
Yu, H. Y. ;
Li, X. ;
Singh, N. ;
Lo, G. Q. ;
Kwong, D. L. .
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (04) :566-568
[7]  
Gaspar D., 2014, NANOTECHNOLOGY, V25, P1
[8]   A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM [J].
Han, Jin-Woo ;
Ryu, Seong-Wan ;
Kim, Chungjin ;
Kim, Sungho ;
Im, Maesoon ;
Choi, Sung Jin ;
Kim, Jin Soo ;
Kim, Kwang Hee ;
Lee, Gi Sung ;
Oh, Jae Sub ;
Song, Myeong Ho ;
Park, Yun Chang ;
Kim, Jeoung Woo ;
Choi, Yang-Kyu .
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :929-+
[9]   Fully printed silicon field effect transistors [J].
Harting, M. ;
Zhang, J. ;
Gamota, D. R. ;
Britton, D. T. .
APPLIED PHYSICS LETTERS, 2009, 94 (19)
[10]  
Hwang S.-W., 2015, ADV MATER, V27, P358