Assembling Molecular Electronic Junctions One Molecule at a Time

被引:28
|
作者
Bonifas, Andrew P. [1 ,2 ]
McCreery, Richard L. [1 ,3 ]
机构
[1] Natl Res Council Canada, Natl Inst Nanotechnol, Edmonton, AB T6G 2G2, Canada
[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA
[3] Univ Alberta, Dept Chem, Edmonton, AB T6G 2R3, Canada
基金
美国国家科学基金会;
关键词
Molecular electronics; molecular junction; organic electronics; electron transport; electron tunneling; CHARGE-TRANSPORT; CONDUCTANCE; CARBON; RESISTANCE; MONOLAYERS; AU;
D O I
10.1021/nl202495k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Diffusion of metal atoms onto a molecular monolayer attached to a conducting surface permits electronic contact to the molecules with minimal heat transfer or structural disturbance. Surface-mediated metal deposition (SDMD) involves contact between "cold" diffusing metal atoms and molecules, due to shielding of the molecules from direct exposure to metal vapor. Measurement of the current through the molecular layer during metal diffusion permits observation of molecular conductance for junctions containing as few as one molecule. Discrete conductance steps were observed for 1-10 molecules within a monolayer during a single deposition run, corresponding to "recruitment" of additional molecules as the contact area between the diffusing Au layer and molecules increases. For alkane monolayers, the molecular conductance measured with SDMD exhibited an exponential dependence on molecular length with a decay constant (beta) of 0.90 per CH2 group, comparable to that observed by other techniques. Molecular conductance values were determined for three azobenzene molecules, and correlated with the offset between the molecular HOMO and the contact Fermi level, as expected for hole-mediated tunneling. Current-voltage curves were obtained during metal deposition showed no change in shape for junctions containing 1, 2, and 10 molecules, implying minimal intermolecular interactions as single molecule devices transitioned into several molecules devices. SDMD represents a "soft" metal deposition method capable of providing single molecule conductance values, then providing quantitative comparisons to molecular junctions containing 10(6) to 10(10) molecules.
引用
收藏
页码:4725 / 4729
页数:5
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