Strain effect on coercive field of epitaxial barium titanate thin films

被引：48

作者：

Choudhury, S. ^{[1
]}

Li, Y. L. ^{[1
]}

Chen, L. Q. ^{[1
]}

Jia, Q. X. ^{[2
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Los Alamos Natl Lab, MPA STC, MS K763, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2908210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strain is generally known to increase the coercive field of a ferroelectric thin film as compared to a stress-free single crystal or a strain-relaxed film. We studied the coercive fields and remanent polarizations of (001)-oriented epitaxial barium titanate thin films using the phase-field approach. It is demonstrated, while the remanent polarization decreases as in-plane strain changes from being compressive to tensile, the variation of coercive field with strain is complicated. We noted more than two times drop in coercive field with a reduction of compressive strain of only similar to 0.05%, which we attribute to the existence of multiple ferroelectric phases. (C) 2008 American Institute of Physics.

引用

页数：3

共 24 条

[1] ELASTIC AND PIEZOELECTRIC COEFFICIENTS OF SINGLE-CRYSTAL BARIUM TITANATE [J].

BERLINCOURT, D ;

JAFFE, H .

PHYSICAL REVIEW, 1958, 111 (01) :143-148

[2] Applications of semi-implicit Fourier-spectral method to phase field equations [J].

Chen, LQ ;

Shen, J .

COMPUTER PHYSICS COMMUNICATIONS, 1998, 108 (2-3) :147-158

[3] Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film [J].

Cho, CR ;

Lee, WJ ;

Yu, BG ;

Kim, BW .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) :2700-2711

[4] The influence of an extrinsic interfacial layer on the polarization of sputtered BaTiO3 film -: art. no. 202905 [J].

Cho, YW ;

Choi, SK ;

Rao, GV .

APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3

[5] Enhancement of ferroelectricity in strained BaTiO3 thin films [J].

Choi, KJ ;

Biegalski, M ;

Li, YL ;

Sharan, A ;

Schubert, J ;

Uecker, R ;

Reiche, P ;

Chen, YB ;

Pan, XQ ;

Gopalan, V ;

Chen, LQ ;

Schlom, DG ;

Eom, CB .

SCIENCE, 2004, 306 (5698) :1005-1009

[6] Correlation between number of ferroelectric variants and coercive field of lead ziconate titanate single crystals [J].

Choudhury, S. ;

Chen, L. Q. ;

Li, Y. L. .

APPLIED PHYSICS LETTERS, 2007, 91 (03)

[7] Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition [J].

Cillessen, JFM ;

Prins, MWJ ;

Wolf, RM .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2777-2783

[8]

DEVONSHIRE AF, 1951, PHILOS MAG, V42, P1065

[9] Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics [J].

Ederer, C ;

Spaldin, NA .

PHYSICAL REVIEW LETTERS, 2005, 95 (25)

[10] Coercive fields in ultrathin BaTiO3 capacitors [J].

Jo, J. Y. ;

Kim, Y. S. ;

Noh, T. W. ;

Yoon, Jong-Gul ;

Song, T. K. .

APPLIED PHYSICS LETTERS, 2006, 89 (23)

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