The influence of methanol addition during the film growth of SnO2 by atmospheric pressure chemical vapor deposition

被引:31
作者
Volintiru, I. [1 ]
de Graaf, A. [1 ]
van Deelen, J. [1 ]
Poodt, P. [1 ]
机构
[1] TNO, NL-5600 HE Eindhoven, Netherlands
关键词
APCVD; Tin oxide; TCO; TIN OXIDE-FILMS; THIN-FILMS; ZINC-OXIDE; OPTICAL-PROPERTIES; DIOXIDE FILMS; DOPED SNO2; TRANSPARENT; FLUORINE; CVD; SUBSTRATE;
D O I
10.1016/j.tsf.2011.03.125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor from a water/tin tetrachloride mixture. By adding methanol during the deposition process the film electrical properties change significantly: ten times more conductive SnO2 films are obtained, with remarkably high mobility values of up to 55 cm(2)/V s. The investigations on the morphological and structural properties indicate that the main effect of methanol is the densification of the SnO2 films, which probably causes the improvement in the electrical properties. In all conditions the nucleation and coalescence phases take place very early in the growth. Below 10 nm the films are already very conductive, which is very beneficial to applications that have strict requirements in terms of film transparency. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:6258 / 6263
页数:6
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