Fano resonance in heavily doped porous silicon

被引：5
|
作者：
Pusep, Y. A. [1 ]
Rodrigues, A. D. [2 ]
Borrero-Gonzalez, L. J. [1 ]
Acquaroli, L. N. [3 ]
Urteaga, R. [3 ]
Arce, R. D. [3 ]
Koropecki, R. R. [3 ]
Tirado, M. [4 ]
Comedi, D. [5 ,6 ]
机构：
[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
[3] INTEC CONICET UNL, RA-3000 Santa Fe, Argentina
[4] Univ Nacl Tucuman, LPDM, Dep Fis, FACET, San Miguel De Tucuman, Argentina
[5] Univ Nacl Tucuman, LAFISO, San Miguel De Tucuman, Argentina
[6] Univ Nacl Tucuman, CONICET, Dep Fis, FACET, San Miguel De Tucuman, Argentina
来源：
JOURNAL OF RAMAN SPECTROSCOPY | 2011年 / 42卷 / 06期
基金：
巴西圣保罗研究基金会;
关键词：
porous silicon; Raman spectroscopy; RAMAN-SCATTERING; LUMINESCENCE; SI;
D O I：
10.1002/jrs.2870
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO(2) interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright (C) 2011 John Wiley & Sons, Ltd.
引用
收藏
页码：1405 / 1407
页数：3
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