All-thermal transistor based on stochastic switching

被引:43
作者
Sanchez, Rafael [1 ]
Thierschmann, Holger [2 ]
Molenkamp, Laurens W. [3 ]
机构
[1] Univ Carlos III Madrid, Inst Gregorio Millan, Madrid 28911, Spain
[2] Delft Univ Technol, Fac Appl Sci, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands
[3] Univ Wurzburg, Phys Inst, Expt Phys 3, D-97074 Wurzburg, Germany
基金
欧洲研究理事会;
关键词
COUPLED QUANTUM DOTS; ENERGY;
D O I
10.1103/PhysRevB.95.241401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device working as a thermal transistor. Charge and heat currents in a two-terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor, hence achieving huge amplification factors. Nonthermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption.
引用
收藏
页数:5
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