HIGH-PRESSURE HIGH-TEMPERATURE BULK-TYPE PIEZORESISTIVE PRESSURE SENSOR

被引：0

作者：

Chan, Elena ^{[1
]}

Lin, Dequan ^{[1
,2
,3
]}

Tang, Zili ^{[1
]}

Lu, Lei ^{[1
,4
]}

Chau, Kevin ^{[1
,2
]}

Wong, Man ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Hong Kong, Peoples R China

[2] Chinese Acad Sci, Inst Geol & Geophys, Beijing, Peoples R China

[3] Univ Chinese Acad Sci, Beijing, Peoples R China

[4] HKUST Jockey Club Inst Adv Study, Hong Kong, Peoples R China

来源：

2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon-based bulk-type pressure sensor capable of measuring pressure up to 200 MPa at temperature up to 175 degrees C is realized and characterized. Hydrostatic pressure acting on the sensor is converted to anisotropic biaxial compression inside an encapsulated vacuum cavity, and measured using two pairs of piezoresistors oriented to optimally utilize the anisotropy of silicon piezoresistance on (110)-oriented substrate. It is also possible to realize the sensor on a conventional (001)-oriented substrate, with the stress-symmetry broken by reducing the biaxial stress field on one pair of the piezoresistors to a uniaxial stress field.

引用

页码：548 / 551

页数：4

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