Pressure effects on the spin-orbit interactions in low-dimensional quantum well systems

被引:14
作者
Rajashabala, S. [1 ]
Navaneethakrishnan, K. [1 ]
机构
[1] Madurai Kamaraj Univ, Sch Phys, Madurai 625021, Tamil Nadu, India
关键词
quantum well; quantum dot; low lying excited states; donor ionization energy; spin-orbit interaction; non-parabolicity of the conduction band and pressure;
D O I
10.1016/j.physe.2007.10.104
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Donor binding energies and spin-orbit interactions (SOIs) are estimated in GaAs-Ga1-xAlxAs quantum well and quantum dot systems. The effect of the conduction band non-parabolicity on these energies is also estimated. In all the cases investigated, the maximum contribution by the non-parabolicity effect is about 5% for narrow well dimensions. It is also seen that the SOI is one order higher in a quantum dot system as compared to a quantum well case. In both cases, the spin-orbit splitting is four orders smaller than the donor binding energies. We observe that the Rashba and Dresslhaus SOIs are about the same order as the conventional spin-orbit contributions. We have also investigated the effect of pressure on the SOI energies and find appreciable enhancement in the quantum well case. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:843 / 848
页数:6
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