Secondary electron imaging of nucleation and growth of semiconductors for nanostructure fabrication

被引：4

作者：

Homma, Y ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

THIN SOLID FILMS | 1998年 / 332卷 / 1-2期

关键词：

scanning electron microscopy; in situ observation; selective growth; nucleation; Si; GaAs;

D O I：

10.1016/S0040-6090(98)01096-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In situ scanning electron microscopy (SEM) images of growing surfaces provide valuable insights into the control of growing structures. Surface morphology evolution due to 2D island nucleation and coalescence is clearly imaged in GaAs molecular beam epitaxy, and compared between (001) and (111)A surfaces. Nucleation sites of 3D islands are identified in solid phase epitaxy of Ge on Si(111). Nucleation sites can be controlled using atomic step networks, as demonstrated by the selective growth of GaAs wires and Au dots on Si(111). (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：262 / 266

页数：5

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