Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography

被引：3

作者：

Ganesan, R ^{[1
]}

Choi, JH ^{[1
]}

Yun, HJ ^{[1
]}

Kwon, YG ^{[1
]}

Kim, KS ^{[1
]}

Oh, TH ^{[1
]}

Kim, JB ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem, Sch Mol Sci BK21, Taejon 305701, South Korea

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXII, PT 1 AND 2 | 2005年 / 5753卷

关键词：

nanomolecular resist; POSS; cholic acid; diazodiketo; photobleaching;

D O I：

10.1117/12.599622

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel nanomolecular resist based on POSS substituted with diazodiketo-functionalized cholate derivatives was successfully synthesized as a candidate for 193-nm lithography. The diazodiketo group was introduced into the cholate derivatives to provide the solubility change and to eliminate the problems of chemically amplified resists. The decomposition temperature of the resist was found to be 130 degrees C. The initial lithographic studies showed the feasibility of the resist to be used as a candidate for 193-nm lithography.

引用

页码：671 / 678

页数：8

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