CMP applications for sub-0.25μm process technologies

被引：0
|
作者：
Pramanik, D [1 ]
Weling, M [1 ]
Lin, XW [1 ]
机构：
[1] VLSI Technol Inc, San Jose, CA 95131 USA
来源：
CHEMICAL MECHANICAL PLANARIZATION IN INTEGRATED CIRCUIT DEVICE MANUFACTURING | 1998年 / 98卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This paper shows how CMP is a key enabler for sub-0.25 mu m processes - CMP can be effectively used in process architectures to form shallow trench isolation, metallize gates, form Cu-based interconnects and low "k" dielectrics. We describe the CMP challenges for these various process applications, review their current status and future trends, and suggest some novel techniques to improve their implementation.
引用
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页码：1 / 8
页数：8
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