Low-Loss Matching Network Design for Band-Switchable Multi-Band Power Amplifier

被引:6
|
作者
Fukuda, Atsushi [1 ]
Furuta, Takayuki [1 ]
Okazaki, Hiroshi [1 ]
Narahashi, Shoichi [1 ]
Nojima, Toshio [2 ]
机构
[1] NTT DOCOMO INC, Yokosuka, Kanagawa 2398536, Japan
[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 06008114, Japan
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2012年 / E95C卷 / 07期
关键词
power amplifier; reconfigurable; matching network; multi-band; switch;
D O I
10.1587/transele.E95.C.1172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a novel design scheme for a band-switchable multi-band power amplifier (BS-MPA). A key point of the design scheme is configuring multi-section reconfigurable matching networks (MR-MNs) optimally in terms of low loss matching in multiple frequency bands from 0.7 to 2.5 GHz. The MR-MN consists of several matching sections, each of which has a matching block connected to a transmission line via a switch. Power dissipation at an actual on-state switch results in the insertion loss of the MR-MN and depends on how the impedance is transformed by the MR-MN. The proposed design scheme appropriately transforms the impedance of a high power transistor to configure a low loss MR-MN. Numerical analyses show quantitative improvement in the loss using the proposed scheme. A 9-band 3-stage BS-MPA is newly designed following the proposed scheme and fabricated on a multi-layer low temperature co-fired ceramic substrate for compactness. The BS-MPA achieves a gain of over 30 dB, an output power of greater than 33 dBm and a power added efficiency of over 40% at the supply voltage of 4 V in each operating band.
引用
收藏
页码:1172 / 1181
页数:10
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