A two-step approach for electrochemical deposition of Cu-Zn-Sn and Se precursors for CZTSe solar cells

被引：47

作者：

Juskenas, Remigijus ^{[1
]}

Kanapeckaite, Stase ^{[1
]}

Karpavitciene, Violeta ^{[1
]}

Mockus, Zenius ^{[1
]}

Pakstas, Vidas ^{[1
]}

Selskiene, Ausra ^{[1
]}

Giraitis, Raimondas ^{[1
]}

Niaura, Gediminas ^{[1
]}

机构：

[1] State Res Inst Ctr Phys Sci & Technol, Vilnius, Lithuania

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 101卷

关键词：

Cu2ZnSnSe4; Kesterite; Electrodeposition; Photovoltaics; CU2ZNSNS4; THIN-FILMS; RAMAN; SELENIZATION;

D O I：

10.1016/j.solmat.2012.02.007

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A two-step electrochemical route for fabrication of Cu-Zn-Sn (CZT) and Se precursors' layers for a thin film Cu2ZnSnSe4 (CZTSe) absorber for solar cells is demonstrated. The CZT was electrochemically co-deposited in a citrate solution and after that an appropriate amount of Se was electrodeposited on the top. The CZT+Se were annealed in Ar atmosphere using a slow or fast increase in temperature up to 500 degrees C. SEM with EDX. XRD and Raman spectroscopy examinations of precursors and of the manufactured CZTSe thin films were carried out. The XRD measurements indicated that the CZT precursor contained eta-Cu2.26Sn5, Sn and gamma-CuZn5 phases. The electrodeposited Se was polycrystalline with a hexagonal structure. The manufactured CZTSe in all the cases presented Cu2ZnSnSe4 with kesterite or partially disordered kesterite structure; however a purer CZTSe phase was formed using the fast increase in the annealing temperature. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：277 / 282

页数：6

共 36 条

[1] Determination of band gap energy (Eg) of Cu2ZnSnSe4 thin films: On the discrepancies of reported band gap values
Ahn, SeJin
Jung, Sunghun
Gwak, Jihye
Cho, Ara
Shin, Keeshik
Yoon, Kyunghoon
Park, Doyoung
Cheong, Hyonsik
Yun, Jae Ho
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (02)
[2] Cu2Zn1-xCdxSn(Se1-ySy)4 solid solutions as absorber materials for solar cells
Altosaar, M.
Raudoja, J.
Timmo, K.
Danilson, M.
Grossberg, M.
Krustok, J.
Mellikov, E.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (01): : 167 - 170
[3] Electronic structure and lattice dynamics in kesterite-type Cu2ZnSnSe4 from first-principles calculations
Amiri, Narjes Beigom Mortazavi
Postnikov, Andrei
[J]. PHYSICAL REVIEW B, 2010, 82 (20):
[4] Preparationof Cu2ZnSnS4 thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors
Araki, Hideaki
Kubo, Yuki
Jimbo, Kazuo
Maw, Win Shwe
Katagiri, Hironori
Yamazaki, Makoto
Oishi, Koichiro
Takeuchi, Akiko
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5, 2009, 6 (05): : 1266 - 1268
[5] Preparation of Cu2ZnSnS4 thin films by sulfurizing electroplated precursors
Araki, Hideaki
Kubo, Yuki
Mikaduki, Aya
Jimbo, Kazuo
Maw, Win Shwe
Katagiri, Hironori
Yamazaki, Makoto
Oishi, Koichiro
Takeuchi, Akiko
[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (6-7) : 996 - 999
[6] STRUCTURAL ORIGIN OF GLASS-FORMATION IN GROUP-IV DISELENIDES
BOOLCHAND, P
HERNANDEZ, J
[J]. PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS, 1988, 38 (3-4): : 305 - 316
[7] Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids
Chan, C. P.
Lam, H.
Surya, C.
[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (02) : 207 - 211
[8] Solvothermal Synthesis and Characterization of Chalcopyrite CuInSe2 Nanoparticles
Chen, Huiyu
Yu, Seong-Man
Shin, Dong-Wook
Yoo, Ji-Beom
[J]. NANOSCALE RESEARCH LETTERS, 2010, 5 (01): : 217 - 223
[9] Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights
Chen, Shiyou
Gong, X. G.
Walsh, Aron
Wei, Su-Huai
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (04)
[10] Lattice dynamics of CdS/ZnSe strained layer superlattices studied by Raman scattering -: art. no. 245310
Dinger, A
Göppert, M
Becker, R
Grün, M
Petillon, S
Klingshirn, C
Liang, J
Wagner, V
Geurts, J
[J]. PHYSICAL REVIEW B, 2001, 64 (24): : 2453101 - 2453108

← 1 2 3 4 →