Sensitivity of Resistive Transition of Sputter-Deposited TiO2 Films to Electrode Material

被引：0
|
作者：
Kawashima, N. [1 ]
Sato, S. [1 ]
Omura, Y. [1 ]
机构：
[1] Kansai Univ, Grad Sch Sci & Engn, Suita, Osaka 5648680, Japan
来源：
2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2016年
关键词：
Resistive transition; TiO2; film; electrode materials;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.
引用
收藏
页码：72 / 73
页数：2
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