Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor

In this paper, the threshold voltage analysis of junctionless nanowire transistor (JNT) due to radiation/process/stress/hot-carrier damage-induced localized/fixed charges at elevated temperatures is discussed. A temperature-dependent threshold voltage model for JNT with localized charges has been developed including the source/drain depleted regions. The impact of position, density, and polarity of localized charges on channel potential, bandgap energy, and threshold voltage is studied. Four different localized charge density profiles have been used to evaluate the performance degradation. The results demonstrate that localized charges significantly change the device threshold voltage and temperature sensitivity and show less detrimental effect at elevated temperatures.