Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

被引：51

作者：

Jacopin, Gwenole ^{[1
]}

Bugallo, Andres De Luna ^{[1
]}

Lavenus, Pierre ^{[1
]}

Rigutti, Lorenzo ^{[1
]}

Julien, Francois H. ^{[1
]}

Zagonel, Luiz F. ^{[2
,3
]}

Kociak, Mathieu ^{[2
]}

Durand, Christophe ^{[4
]}

Salomon, Damien ^{[4
,5
]}

Chen, Xiao Jun ^{[4
]}

Eymery, Joel ^{[4
]}

Tchernycheva, Maria ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France

[2] Univ Paris 11, CNRS, Lab Phys Solides, UMR 8502, F-91405 Orsay, France

[3] Ctr Nacl Pesquisa Energia & Mat, Lab Nacl Nanotecnol, BR-13083970 Campinas, SP, Brazil

[4] Univ Grenoble 1, INAC, Equipe Mixte Nanophys & Semicond, CEA CNRS,SP2M,UMR E CEA, F-38054 Grenoble 9, France

[5] CEA Leti, F-38054 Grenoble, France

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期

关键词：

NANOWIRE HETEROSTRUCTURES; SUBSTRATE;

D O I：

10.1143/APEX.5.014101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-wire light-emitting diodes based on radial p-i-n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst-free metal organic vapor phase epitaxy. The InxGa1-xN/GaN undoped QW system is coated over both the nonpolar lateral sidewalls and on the polar upper surface. Cathodo- and electroluminescence (EL) experiments provide evidence that the polar QWs emit in the visible spectral range at systematically lower energy than the nonpolar QWs. The EL of the polar or nonpolar QWs can be selectively activated by varying the sample temperature and current injection level. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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