"Step-graded interlayers" for the improvement of MOVPE InxGa1-xN (x ∼ 0.4) epi-layer quality

被引：12

作者：

Islam, Md Rafiqul ^{[1
]}

Ohmura, Y. ^{[1
]}

Hashimoto, A. ^{[1
]}

Yamamoto, A. ^{[1
]}

Kinoshita, K. ^{[2
]}

Koji, Y. ^{[2
]}

机构：

[1] Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan

[2] Kansai Elect Power Co Inc, Energy Use R&D Ctr, Amagasaki, Hyogo 6610974, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

InGaN; MOVPE; growth; dislocations; FILMS; GAN; MICROSCOPY;

D O I：

10.1002/pssc.200983586

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reports the effect of step-graded interlayers on MOVPE InGaN epi-layer quality. Multilayer epitaxial structures consisting of InxGa1-xN layers with various compositions have been successfully grown. HRXRD measurements reveal that the insertion of step-graded interlayers significantly reduces the twist while little effects are observed on tilt. Decreasing of twist with increasing the number of interlayers is found to be remarkable up to a certain value and then maintain nearly the same even with increasing the In composition. Different types of dislocation density have also been studied using the X-ray diffraction analysis. Dislocation densities, particularly the edge dislocation density, decrease considerably with the insertion of interlayers for higher In composition. An edge dislocation of 3x10(10) cm(-2) is obtained for a smple with 0.25 In composition, that seems to come from the GaN layer beneath the step-graded interlayers. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：4

共 13 条

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