Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology

被引：27

作者：

Al-Attar, T ^{[1
]}

Lee, TH ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2005年 / 53卷 / 11期

关键词：

complementary metal-oxide-semiconductor technology (CMOS); impact avalanche transit time (IMPATT) diode; microstrip patch antenna; Sonnet; stub; vector network analyzer (VNA);

D O I：

10.1109/TMTT.2005.858379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-mu m standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dBm at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.

引用

页码：3557 / 3561

页数：5

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