Low loss dielectrics in Ba[(Mg1/3Ta2/3)1-xTix]O3 and Ba[(Mg1-xZnx)1/3Ta2/3]O3 systems

被引:25
|
作者
Surendran, KP [1 ]
Sebastian, MT [1 ]
机构
[1] Reg Res Lab, Ceram Technol Div, Trivandrum 695019, Kerala, India
关键词
D O I
10.1557/JMR.2005.0384
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microwave dielectric properties of ceramics based on Ba[(Mg1/3Ta2/3)(1-x)Ti-x]O-3 (BMT-BT) and Ba[(Mg1-xZnx)(1/3)Ta-2/3]O-3 (BMT-BZT) were investigated as a function of composition x. In BMT-BT solid solution, the dielectric properties deteriorated with increasing concentration of Ti substitution at the B-site of BMT. A correlation was established between the quality factors of the solid solution phases and their tolerance factor. In BMT-BZT solid solution, where both the end compounds are ordered perovskites, the unit cell expands with increasing mole fraction of the Zn in Mg site of BMT while the dielectric constant increases monotonously from 24.8 (for BMT) to 29.7 (BZT). In BMT-BZT solid solution, the quality factor reaches a maximum (Q(u).f = 109,900 GHz) for 60 mol% of BZT.
引用
收藏
页码:2919 / 2926
页数:8
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