Silicon-on-Nothing MOSFETs: An efficient solution for parasitic substrate coupling suppression in SOI devices

被引：14

作者：

Kilchytska, V. ^{[1
]}

Flandre, D. ^{[1
]}

Raskin, J. -P ^{[2
]}

机构：

[1] Catholic Univ Louvain, Microelect Lab, B-1348 Louvain, Belgium

[2] Catholic Univ Louvain, Microwave Lab, B-1348 Louvain, Belgium

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 19期

关键词：

SOI MOSFETs; output conductance; substrate crosstalk; silicon-on-Nothing MOSFETs;

D O I：

10.1016/j.apsusc.2008.02.171

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

With today's technology downscaling, the coupling through the substrate becomes an important limiting factor for the performance of mixed-mode high-frequency integrated circuits, filters, convertors, transmission lines and even single MOSFETs. This paper presents original studies on the coupling through the substrate in SOI devices and on substrate engineering which allows to suppress this effect. Particular attention is paid to the Silicon-on-Nothing (SON) MOSFET architecture as one of the most promising solutions to suppress the effect of parasitic coupling through the substrate on the transistor behavior. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：6168 / 6173

页数：6

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