Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance

被引:42
作者
Goethals, Frederik [1 ]
Ciofi, Ivan [2 ]
Madia, Oreste [2 ]
Vanstreels, Kris [2 ]
Baklanov, Mikhail R. [2 ]
Detavernier, Christophe [3 ]
Van der Voort, Pascal [1 ]
Van Driessche, Isabel [1 ]
机构
[1] Univ Ghent, Dept Inorgan & Phys Chem, B-9000 Ghent, Belgium
[2] IMEC, B-3001 Louvain, Belgium
[3] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
基金
欧洲研究理事会;
关键词
PERIODIC MESOPOROUS ORGANOSILICAS; DIELECTRIC-CONSTANT MATERIALS; THIN-FILMS; ELLIPSOMETRIC POROSIMETRY; ORGANIC GROUPS; HYBRID; SILICA; STABILITIES; SURFACTANT; FRAMEWORKS;
D O I
10.1039/c2jm30312d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Periodic mesoporous organosilicas (PMOs) are one of the most promising candidates to be used as ultra-low-k dielectrics in microelectronic devices. In this paper, PMO thin films that combine an ultra-low-k value, a hydrophobic property and a high resistance against aggressive chemical conditions are presented. The films are synthesized via spin-coating of a 1,1,3,3,5,5-hexaethoxy-1,3,5-trisilacyclohexane, hydrochloric acid, water and ethanol mixture using polyoxyethylene (10) stearyl ether as a porogen template. The obtained highly porous films are hydrophobic, crack-free and an ultra-low k-value of 1.8 is achieved. Finally, the chemical resistance of these PMO films against alkaline solutions is investigated in detail and compared with the resistance of mesoporous silicas and PMOs synthesized with cetyl trimethylammonium chloride.
引用
收藏
页码:8281 / 8286
页数:6
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