Nitrogen is a deep acceptor in ZnO

被引:117
作者
Tarun, M. C. [1 ,2 ]
Iqbal, M. Zafar [3 ]
McCluskey, M. D. [1 ,2 ]
机构
[1] Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA
[2] Washington State Univ, Mat Sci Program, Pullman, WA 99164 USA
[3] COMSATS Inst Informat Technol, Dept Phys, Islamabad 44000, Pakistan
基金
美国国家科学基金会;
关键词
MOLECULAR-BEAM EPITAXY; VAPOR; SEMICONDUCTORS; HYDROGEN; GROWTH; ENERGY;
D O I
10.1063/1.3582819
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations [Lyons, Janotti, and Van de Walle, Appl. Phys. Lett. 95, 252105 (2009)] indicate that nitrogen is a deep acceptor. This paper presents experimental evidence that nitrogen is, in fact, a deep acceptor and therefore cannot produce p-type ZnO. A broad photoluminescence (PL) emission band near 1.7 eV, with an excitation onset of similar to 2.2 eV, was observed, in agreement with the deep-acceptor model of the nitrogen defect. The deep-acceptor behavior can be explained by the low energy of the ZnO valence band relative to the vacuum level. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3582819]
引用
收藏
页数:7
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